ElZein Basma, Yao Yingbang, Barham Ahmad S, Dogheche Elhadj, Jabbour Ghassan E
Electrical Engineering Department, College of Engineering, University of Business and Technology (UBT), Jeddah 21361, Saudi Arabia.
Institute of Electronics, Microelectronics and Nanotechnology, CNRS and University Lille Nord de France- Avenue Poincaré, CEDEX, 59652 Villeneuve d'Ascq, France.
Materials (Basel). 2020 Oct 5;13(19):4427. doi: 10.3390/ma13194427.
Vertically-oriented zinc oxide (ZnO) nanowires were synthesized on glass and silicon substrates by Pulsed Laser Deposition and without the use of a catalyst. An intermediate c-axis oriented nanotextured ZnO seed layer in the form of nanowall network with honey comb structure allows the growth of high quality, self-forming, and vertically-oriented nanowires at relatively low temperature (<400 °C) and under argon atmosphere at high pressure (>5 Torr). Many parameters were shown to affect the growth of the ZnO nanowires such as gas pressure, substrate-target distance, and laser energy. Growth of a c-axis-crystalline array of nanowires growing vertically from the energetically favorable sites on the seed layer is observed. Nucleation occurs due to the matching lattice structure and the polar nature of the ZnO seed layer. Morphological, structural, and optical properties were investigated. X-ray diffraction (XRD) revealed highly c-axis aligned nanowires along the (002) crystal plane. Room temperature photoluminescence (PL) measurements showed a strong and narrow bandwidth of Ultraviolet (UV) emission, which shifts to lower wavelength with the increase of pressure.
通过脉冲激光沉积法，在不使用催化剂的情况下，在玻璃和硅衬底上合成了垂直取向的氧化锌（ZnO）纳米线。具有蜂窝结构的纳米壁网络形式的中间c轴取向纳米织构ZnO籽晶层，使得高质量、自形成且垂直取向的纳米线能在相对较低温度（<400°C）和高压（>5托）的氩气气氛下生长。结果表明，许多参数会影响ZnO纳米线的生长，如气压、衬底与靶材的距离以及激光能量。观察到从籽晶层上能量有利位置垂直生长的c轴晶体纳米线阵列。由于ZnO籽晶层的晶格结构匹配和极性性质，会发生成核现象。对其形态、结构和光学性质进行了研究。X射线衍射（XRD）显示沿（002）晶面有高度c轴取向的纳米线。室温光致发光（PL）测量显示出强烈且带宽窄的紫外（UV）发射，其随着压力增加向更低波长移动。
