Highly integrated coupled cavity photonic crystal laser with on-chip power control on the AlGaIn/AsSb material system.

We present a multi-segment photonic crystal coupled cavity laser device on GaSb with a microstructured internal photodiode. This monolithically integrated power monitor is added as a third segment to a coupled cavity laser and is separated from the active device by six rows of two-dimensional photonic crystals, acting as highly reflecting mirrors. There is no additional fabrication step needed to integrate this feature into the coupled cavity laser, resulting in a highly integrated laser device of only 800 µm length. The device with lasing wavelength around 1955 nm shows single mode emission over a tuning range of as large as 16 nm and exhibits output powers of up to 9 mW.