High-power, (AlGaIn)(AsSb) semiconductor disk laser at 2.0 microm.
作者信息
Hopkins J-M, Hempler N, Rösener B, Schulz N, Rattunde M, Manz C, Köhler K, Wagner J, Burns D
机构信息
Institute of Photonics, SUPA, University of Strathclyde, Wolfson Centre, 106 Rottenrow, Glasgow, G4 0NW, UK.
出版信息
Opt Lett. 2008 Jan 15;33(2):201-3. doi: 10.1364/ol.33.000201.
PMID:18197239
Abstract
We report a high-power (AlGaIn)(AsSb) semiconductor disk laser emitting around 2 microm. With a diamond heat spreader used for thermal management, a maximum output power of just over 5 W and slope efficiencies of over 25% were demonstrated. The output wavelength was tunable over an 80 nm range centered at 1.98 microm. The beam propagation parameter (M2) was measured to be in the range of 1.1 to 1.4 for output powers up to 3 W.
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