Sánchez-García J A, Vázquez L, Gago R, Redondo-Cubero A, Albella J M, Czigány Zs
Instituto de Ciencia de Materiales de Madrid, Consejo Superior de Investigaciones Científicas, E-28049 Madrid, Spain.
Nanotechnology. 2008 Sep 3;19(35):355306. doi: 10.1088/0957-4484/19/35/355306. Epub 2008 Jul 17.
We report on the selective production of self-organized nanohole and nanodot patterns on Si(001) surfaces by ion beam sputtering (IBS) under normal-incidence of 1 keV Ar(+) ions extracted with a cold cathode ion source. For a fixed ion fluence, nanohole patterns are induced for relatively low ion current densities (50-110 µA cm(-2)), evolving towards nanodot patterns for current densities above 190 µA cm(-2). Both patterns display similar characteristics in terms of wavelength, short-range hexagonal order and roughness. Rutherford backscattering spectrometry measurements show that the surface morphology is tuned by the incorporation of metals coming from the ion source and sample surroundings during the IBS process. The metal content measured in nanohole patterns is almost twice that found in nanodot morphologies. Thus, the pattern morphology results from the balance between the dependences of the erosion rate on the ion flux, the local surface topography and composition. These nanostructures have promising applications as growth templates for preferential growth on either hillocks or cavities.
我们报道了在冷阴极离子源提取的1 keV Ar(+)离子垂直入射条件下，通过离子束溅射（IBS）在Si(001)表面选择性制备自组织纳米孔和纳米点图案。对于固定的离子注量，在相对较低的离子电流密度（50 - 110 μA cm(-2)）下诱导出纳米孔图案，当电流密度高于190 μA cm(-2)时则演变为纳米点图案。两种图案在波长、短程六方有序性和粗糙度方面表现出相似的特征。卢瑟福背散射光谱测量表明，在IBS过程中，表面形貌通过来自离子源和样品周围环境的金属掺入而得到调节。在纳米孔图案中测得的金属含量几乎是纳米点形貌中的两倍。因此，图案形貌源于侵蚀速率对离子通量、局部表面形貌和成分的依赖性之间的平衡。这些纳米结构作为在小丘或空洞上优先生长的生长模板具有广阔的应用前景。
