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关于缺陷和脱落在硅(100)上铟链形成与生长中作用的动力学蒙特卡罗研究。

A kinetic Monte Carlo study on the role of defects and detachment in the formation and growth of In chains on Si(100).

作者信息

Albao Marvin A, Evans J W, Chuang Feng-Chuan

机构信息

Department of Physics, National Sun Yat-Sen University, Kaohsiung, 804, Taiwan. Institute of Mathematical Sciences and Physics, University of the Philippines Los Banos, 4031, Philippines.

出版信息

J Phys Condens Matter. 2009 Oct 7;21(40):405002. doi: 10.1088/0953-8984/21/40/405002. Epub 2009 Sep 8.

DOI:10.1088/0953-8984/21/40/405002
PMID:21832404
Abstract

Deposition on a Si(100) surface and subsequent self-assembly of In atoms into one-dimensional (1D) atomic chains at room temperature is investigated via kinetic Monte Carlo simulation of a suitable atomistic model. Model development is guided by recent experimental observations in which 1D In chains nucleate effectively exclusively at C-type defects, although In atoms can detach from chains. We find that a monotonically decreasing form of the scaled island size distribution (ISD) is consistent with a high defect density which facilitates persistent chain nucleation even at relatively high coverages. The predominance of heterogeneous nucleation may be attributed to several factors including low surface diffusion barriers, a high defect density, and relatively weak In-In binding.

摘要

通过对合适的原子模型进行动力学蒙特卡罗模拟,研究了室温下铟原子在硅(100)表面的沉积以及随后自组装成一维(1D)原子链的过程。模型的开发是基于最近的实验观察结果,即一维铟链仅在C型缺陷处有效成核,尽管铟原子可以从链上脱离。我们发现,缩放后的岛尺寸分布(ISD)呈单调递减形式,这与高缺陷密度一致,即使在相对较高的覆盖率下,高缺陷密度也有利于持续的链成核。异质成核的优势可能归因于几个因素,包括低表面扩散势垒、高缺陷密度和相对较弱的铟-铟键合。

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