Joshua Arjun, Venkataraman V
Department of Physics, Indian Institute of Science, Bangalore 560012, India.
J Phys Condens Matter. 2009 Nov 4;21(44):445804. doi: 10.1088/0953-8984/21/44/445804. Epub 2009 Oct 15.
The spin degree of freedom is largely disregarded in existing theories of the density-dependent optical properties of an interacting electron-hole plasma in quasiequilibrium. Here, we extended the pair equation, which is applicable to a bulk semiconductor at elevated temperatures, to calculate optical nonlinearities due to a spin-polarized plasma. We obtained agreement with recent circular dichroism data in laser-excited GaAs by using the plasma density alone as the fitting parameter. The simplicity of our theory, based on the analytical pair-equation formula, makes it ideal for conveniently modelling absorption in a carrier spin-polarized semiconductor.
在准平衡态下，相互作用的电子 - 空穴等离子体的密度依赖光学性质的现有理论中，自旋自由度在很大程度上被忽略了。在这里，我们扩展了适用于高温下块状半导体的对等式，以计算由于自旋极化等离子体引起的光学非线性。通过仅将等离子体密度作为拟合参数，我们获得了与最近激光激发的砷化镓中的圆二色性数据的一致性。基于解析对等式公式的我们理论的简单性，使其非常适合于方便地模拟载流子自旋极化半导体中的吸收。
