Sun Haikuo, Luo Ming, Weng Wenjian, Cheng Kui, Du Piyi, Shen Ge, Han Gaorong
Department of Materials Science and Engineering, State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, People's Republic of China.
Nanotechnology. 2008 Oct 1;19(39):395602. doi: 10.1088/0957-4484/19/39/395602. Epub 2008 Aug 11.
Position- and density-controlled ZnO nanorod arrays (ZNAs) were successfully grown on a Si substrate through a low temperature (90 °C) hydrothermal approach assisted by pre-formed ZnO micro/nanodots. The ZnO dots on Si substrates were prepared by a spin-coating technique, through which the pattern and density of the dots could be easily changed. Accordingly, the position- and density-controlled growth of ZNAs was achieved. For the resulting density-controlled ZNAs, the density could range from (5.6 ± 0.01) × 10(2) to (1.2 ± 0.01) × 10(2) rods µm(-2). The room-temperature photoluminescence (PL) spectrum of ZNAs exhibited excellent UV emission. The water wettability measurements of the ZNAs with different density showed good hydrophobicity, and the ZNAs with the lowest density revealed a superhydrophobic characteristic with a water contact angle of 166.1°.
通过由预先形成的ZnO微/纳米点辅助的低温（90°C）水热法，在硅衬底上成功生长了位置和密度可控的ZnO纳米棒阵列（ZNAs）。通过旋涂技术在硅衬底上制备ZnO点，通过该技术可以轻松改变点的图案和密度。因此，实现了ZNAs的位置和密度可控生长。对于所得的密度可控的ZNAs，密度范围可以从（5.6±0.01）×10²到（1.2±0.01）×10²根/μm²。ZNAs的室温光致发光（PL）光谱表现出优异的紫外发射。对不同密度的ZNAs进行的水润湿性测量显示出良好的疏水性，密度最低的ZNAs表现出超疏水特性，水接触角为166.1°。
