Luais E, Boujtita M, Gohier A, Tailleur A, Casimirius S, Djouadi M A, Granier A, Tessier P Y
Institut des Matériaux Jean Rouxel, IMN, Université de Nantes, CNRS, 2 rue de la Houssinière, BP 32229, 44322 Nantes cedex 3, France. CEISAM, Université de Nantes, CNRS, 2 rue de la Houssinière, BP 32229, 44322 Nantes cedex 3, France.
Nanotechnology. 2008 Oct 29;19(43):435502. doi: 10.1088/0957-4484/19/43/435502. Epub 2008 Sep 22.
An original approach was developed and validated for the fabrication of a carbon nanotube (CNT) electrode synthesized directly onto a carbon buffer thin film deposited on a highly doped monocrystalline silicon surface. The buffer layer of amorphous carbon thin film was deposited by physical vapour deposition on the silicon substrate before CNT synthesis. For this purpose, nickel was deposited on the carbon buffer layer by an electrochemical procedure and used as a catalyst for the CNT growth. The CNT synthesis was achieved by plasma enhanced chemical vapour deposition (PECVD) in an electron cyclotron resonance (ECR) plasma chamber using a C(2)H(2)/NH(3) gas mixture. In order to evaluate the electrochemical behaviour of the CNT-based electrode, the carbon layer and the silicon/carbon interface were studied. The resulting buffer layer enhanced the electronic transport from the doped silicon to the CNTs. The electrode surface was studied by XPS and characterized by both SEM and TEM. The electrochemical response exhibited by the resulting electrodes modified with CNTs was also examined by cyclic voltammetry. The whole process was found to be compatible with silicon microtechnology and could be envisaged for the direct integration of microsensors on silicon chips.
开发并验证了一种原始方法，用于制造直接合成在沉积于高掺杂单晶硅表面的碳缓冲薄膜上的碳纳米管（CNT）电极。在碳纳米管合成之前，通过物理气相沉积在硅衬底上沉积非晶碳薄膜缓冲层。为此，通过电化学方法在碳缓冲层上沉积镍，并用作碳纳米管生长的催化剂。在电子回旋共振（ECR）等离子体腔室中，使用C₂H₂/NH₃气体混合物，通过等离子体增强化学气相沉积（PECVD）实现碳纳米管的合成。为了评估基于碳纳米管的电极的电化学行为，研究了碳层和硅/碳界面。所得缓冲层增强了从掺杂硅到碳纳米管的电子传输。通过XPS研究电极表面，并通过SEM和TEM进行表征。还通过循环伏安法研究了用碳纳米管修饰的所得电极表现出的电化学响应。发现整个过程与硅微技术兼容，并且可以设想将微传感器直接集成到硅芯片上。
