包含阱中量子点结构的图案化量子点的光致发光效率提高。
Improved photoluminescence efficiency of patterned quantum dots incorporating a dots-in-the-well structure.
作者信息
Wong P S, Liang B L, Dorogan V G, Albrecht A R, Tatebayashi J, He X, Nuntawong N, Mazur Yu I, Salamo G J, Brueck S R J, Huffaker D L
机构信息
Electrical Engineering Department, University of California at Los Angeles, Los Angeles, CA 90095, USA.
出版信息
Nanotechnology. 2008 Oct 29;19(43):435710. doi: 10.1088/0957-4484/19/43/435710. Epub 2008 Sep 22.
InAs quantum dots embedded in InGaAs quantum well (DWELL: dots-in-the-well) structures grown on nanopatterned GaAs pyramids and planar GaAs(001) surface are comparatively investigated. Photoluminescence (PL) measurements demonstrate that the DWELL structure grown on the GaAs pyramids exhibits a broad quantum well PL band (full width at half-maximum ∼ 90 meV) and a higher quantum dot emission efficiency than the DWELL structure grown on the planar GaAs(001) substrate. These properties are attributed to the InGaAs quantum well with distributed thickness profile on the faceted GaAs pyramids, which introduces a tapered energy band structure and enhances carrier capture into the quantum dots.
对生长在纳米图案化砷化镓金字塔和平面砷化镓（001）表面上的嵌入铟镓砷量子阱中的砷化铟量子点（DWELL：阱中量子点）结构进行了对比研究。光致发光（PL）测量表明，生长在砷化镓金字塔上的DWELL结构呈现出较宽的量子阱PL带（半高宽约90毫电子伏特），并且比生长在平面砷化镓（001）衬底上的DWELL结构具有更高的量子点发射效率。这些特性归因于在刻面砷化镓金字塔上具有分布厚度轮廓的铟镓砷量子阱，它引入了渐变的能带结构并增强了载流子向量子点的捕获。
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