Borgström M T, Norberg E, Wickert P, Nilsson H A, Trägårdh J, Dick K A, Statkute G, Ramvall P, Deppert K, Samuelson L
Solid State Physics, Lund University, Box 118, S-221 00 Lund, Sweden.
Nanotechnology. 2008 Nov 5;19(44):445602. doi: 10.1088/0957-4484/19/44/445602. Epub 2008 Sep 29.
The use of tetraethyltin (TESn) and dimethylzinc (DMZn) as in situ n- and p-dopant precursors during particle-assisted growth of InP nanowires is reported. Gate voltage dependent transport measurements demonstrate that the nanowires can be predictably synthesized as either n- or p-type. These doped nanowires can be characterized based on their electric field response and we find that n-type doping scales over a range from 10(17) to 10(19) cm(-3) with increasing input TESn dopant molar fraction. On the other hand, the p-type doping using DMZn saturates at low levels, probably related to a strong increase in nanowire growth rate with increasing DMZn molar fractions. By optimizing growth conditions with respect to tapering, axial pn-junctions exhibiting rectifying behavior were fabricated. The pn-junctions can be operated as light emitting diodes.
报道了在磷化铟纳米线的颗粒辅助生长过程中，使用四乙基锡（TESn）和二甲基锌（DMZn）作为原位n型和p型掺杂前驱体的情况。栅极电压依赖的输运测量表明，纳米线可以被可预测地合成为n型或p型。这些掺杂纳米线可以根据其电场响应进行表征，并且我们发现随着输入的TESn掺杂剂摩尔分数增加，n型掺杂在10¹⁷至10¹⁹ cm⁻³的范围内变化。另一方面，使用DMZn的p型掺杂在低水平时达到饱和，这可能与随着DMZn摩尔分数增加纳米线生长速率的强烈增加有关。通过优化关于逐渐变细的生长条件，制造出了表现出整流行为的轴向pn结。这些pn结可以用作发光二极管。
