用于InAs/(In)GaAsN/GaAs异质结构波长控制的分子束外延生长方法。
Molecular beam epitaxy growth methods of wavelength control for InAs/(In)GaAsN/GaAs heterostructures.
作者信息
Mamutin V V, Egorov A Yu, Kryzhanovskaya N V
机构信息
Ioffe Physical Technical Institute, 26 Politechnicheskaya, St Petersburg 194021, Russia.
出版信息
Nanotechnology. 2008 Nov 5;19(44):445715. doi: 10.1088/0957-4484/19/44/445715. Epub 2008 Oct 2.
We discuss the molecular beam epitaxy (MBE) growth methods of emission wavelength control and property investigations for different types of InAs/(In)GaAsN/GaAs heterostructures containing InGaAsN quantum-size layers: (1) InGaAsN quantum wells deposited by the conventional mode in a GaAs matrix, (2) InAs quantum dots deposited in a GaAsN matrix or covered by an InGaAs(N) layer, and (3) InAs/InGaAsN/GaAsN strain-compensated superlattices with quantum wells and quantum dots. The structures under investigation have demonstrated photoluminescence emission in a wavelength range of ∼1.3-1.8 µm at room temperature without essential deterioration of the radiative properties.
我们讨论了用于不同类型包含InGaAsN量子尺寸层的InAs/(In)GaAsN/GaAs异质结构的发射波长控制和特性研究的分子束外延（MBE）生长方法：（1）通过常规模式沉积在GaAs基体中的InGaAsN量子阱，（2）沉积在GaAsN基体中或被InGaAs(N)层覆盖的InAs量子点，以及（3）具有量子阱和量子点的InAs/InGaAsN/GaAsN应变补偿超晶格。所研究的结构在室温下在约1.3 - 1.8 µm波长范围内表现出光致发光发射，且辐射特性没有显著恶化。
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