Dunford Jeffrey L, Dhirani Al-Amin
Department of Chemistry, University of Toronto, Toronto, ON, M5S 3H6, Canada.
Nanotechnology. 2008 Nov 12;19(45):455402. doi: 10.1088/0957-4484/19/45/455402. Epub 2008 Oct 8.
Interfaces between disordered normal materials and superconductors (S) can exhibit 'reflectionless tunnelling' (RT)-a phenomenon that arises from repeated disorder-driven elastic scattering, multiple Andreev reflections, and electron/hole interference. RT has been used to explain zero-bias conductance peaks (ZBCPs) observed using doped semiconductors and evaporated granular metal films as the disordered normal materials. Recently, in addition to ZBCPs, magnetoconductance oscillations predicted by RT theory have been observed using a novel normal disordered material: self-assembled nanoparticle films. In the present study, we find that the period of these oscillations decreases as temperature (T) increases. This suggests that the magnetic flux associated with interfering pathways increases accordingly. We propose that the increasing flux can be attributed to magnetic field penetration into S as [Formula: see text]. This model agrees remarkably well with known T dependence of penetration depth predicted by Bardeen-Cooper-Schrieffer theory. Our study shows that this additional region of flux is significant and must be considered in experimental and theoretical studies of RT.
无序正常材料与超导体(S)之间的界面可能会出现“无反射隧穿”(RT)——这是一种由无序驱动的弹性散射、多次安德烈夫反射以及电子/空穴干涉引起的现象。RT已被用于解释使用掺杂半导体和蒸发颗粒金属膜作为无序正常材料时观察到的零偏置电导峰(ZBCP)。最近,除了ZBCP之外,利用一种新型的正常无序材料——自组装纳米颗粒膜,还观察到了RT理论预测的磁电导振荡。在本研究中,我们发现这些振荡的周期随着温度(T)的升高而减小。这表明与干涉路径相关的磁通量相应增加。我们提出,增加的磁通量可归因于磁场以[公式:见正文]的形式穿透到S中。该模型与巴丁 - 库珀 - 施里弗理论预测的穿透深度的已知温度依赖性非常吻合。我们的研究表明,这个额外的磁通量区域很重要,在RT的实验和理论研究中必须予以考虑。