Stanisavljevic M, Schmid A, Leblebici Y
Microelectronic Systems Laboratory (LSM), Swiss Federal Institute of Technology (EPFL), CH-1015 Lausanne, Switzerland.
Nanotechnology. 2008 Nov 19;19(46):465202. doi: 10.1088/0957-4484/19/46/465202. Epub 2008 Oct 21.
The theoretical analysis of R-fold modular redundancy, cascaded R-fold modular redundancy and NAND multiplexing is presented and these fault-tolerant techniques are compared in terms of resistance to massive levels of defect density. Optimal cluster size analysis and redundancy optimization of the cascaded R-fold modular redundancy technique has been performed for the first time in the context of a large-scale system. The optimal window of application of each fault-tolerant technique with respect to defect density is presented as a way to find the optimum design trade-off between the reliability and power/area. Building viable systems consisting of components with high defect densities in future nanoscale technologies will have a high cost in power/area, regardless of the fault-tolerant techniques used.
本文对R倍模冗余、级联R倍模冗余和与非复用进行了理论分析，并在抗大量缺陷密度方面对这些容错技术进行了比较。在大规模系统的背景下，首次对级联R倍模冗余技术进行了最优簇大小分析和冗余优化。给出了每种容错技术相对于缺陷密度的最佳应用窗口，以此作为在可靠性与功耗/面积之间找到最佳设计权衡的一种方法。无论使用何种容错技术，在未来的纳米级技术中构建由具有高缺陷密度的组件组成的可行系统都将在功耗/面积方面付出高昂代价。
