Liu C, Dai L, You L P, Xu W J, Qin G G
Department of Physics and State Key Lab for Mesoscopic Physics, Peking University, Beijing 100871, People's Republic of China.
Nanotechnology. 2008 Nov 19;19(46):465203. doi: 10.1088/0957-4484/19/46/465203. Epub 2008 Oct 21.
Single-crystalline n-type InP nanowires (NWs) with different electron concentrations were synthesized on Si substrates via the vapor phase transport method. The electrical properties of the InP nanowires were investigated by fabricating and measuring single NW field-effect transistors (FETs). Single InP NW/p(+)-Si heterojunctions were fabricated, and electroluminescence (EL) spectra from them were studied. It was found that both the photoluminescence (PL) spectra of the InP NWs and the EL spectra of the heterojunctions blueshift from 920 to 775 nm when the electron concentrations of the InP NWs increase from 2 × 10(17) to 1.4 × 10(19) cm(-3). The blueshifts can be attributed to the Burstein-Moss effect rather than the quantum confinement effect in the InP NWs. The large blueshifts observed in this study indicate a potential application of InP NWs in nano-multicolour displays.
通过气相输运法在硅衬底上合成了具有不同电子浓度的单晶n型磷化铟纳米线（NWs）。通过制备和测量单个NW场效应晶体管（FET）来研究磷化铟纳米线的电学性质。制备了单个InP NW/p(+) -Si异质结，并研究了它们的电致发光（EL）光谱。研究发现，当InP NWs的电子浓度从2×10(17)增加到1.4×10(19) cm(-3)时，InP NWs的光致发光（PL）光谱和异质结的EL光谱均从920 nm蓝移至775 nm。这种蓝移可归因于Burstein-Moss效应，而非InP NWs中的量子限制效应。本研究中观察到的大蓝移表明InP NWs在纳米多色显示器中有潜在应用。
