School of Science, Nanjing Forestry University, Nanjing, Jiangsu 210037, P. R. China.
Nanoscale. 2011 Sep 1;3(9):3620-2. doi: 10.1039/c1nr10569h. Epub 2011 Aug 15.
The properties of dopant-related defects in silicon nanowires are key characteristics in semiconductive devices. Our first-principles calculations predicted that the preferred doping sites of B and P atoms in hydrogen-passivated silicon nanowires have opposite distribution behavior under electric field, suggesting a steady intrinsic p-n junction can be spontaneously formed in (B and P) codoped silicon nanowires.
掺杂相关缺陷在硅纳米线中的性质是半导体器件的关键特性。我们的第一性原理计算预测，在氢化硅纳米线中，B 和 P 原子的优先掺杂位置在电场下具有相反的分布行为，这表明在（B 和 P）共掺杂硅纳米线中可以自发形成稳定的本征 p-n 结。
