Institute of Bio- and Nanosystems, Forschungszentrum Jülich and JARA-Fundamentals of Future Information Technology, D-52425 Jülich, Germany.
Nanotechnology. 2010 Mar 12;21(10):105701. doi: 10.1088/0957-4484/21/10/105701. Epub 2010 Feb 15.
We present electrical characterization of nickel monosilicide (NiSi) contacts formed on strained and unstrained silicon nanowires (NWs), which were fabricated by top-down processing of initially As(+) implanted and activated strained and unstrained silicon-on-insulator (SOI) substrates. The resistivity of doped Si NWs and the contact resistivity of the NiSi to Si NW contacts are studied as functions of the As(+) ion implantation dose and the cross-sectional area of the wires. Strained silicon NWs show lower resistivity for all doping concentrations due to their enhanced electron mobility compared to the unstrained case. An increase in resistivity with decreasing cross section of the NWs was observed for all implantation doses. This is ascribed to the occurrence of dopant deactivation. Comparing the silicidation of uniaxially tensile strained and unstrained Si NWs shows no difference in silicidation speed and in contact resistivity between NiSi/Si NW. Contact resistivities as low as 1.2 x 10(-8) Omega cm(-2) were obtained for NiSi contacts to both strained and unstrained Si NWs. Compared to planar contacts, the NiSi/Si NW contact resistivity is two orders of magnitude lower.
我们展示了镍单硅化物（NiSi）接触的电学特性，这些接触是在应变和未应变的硅纳米线（NWs）上形成的，这些 NWs是通过最初的砷（+）注入和激活的应变和未应变的绝缘体上硅（SOI）衬底的自上而下处理制造的。掺杂硅 NWs 的电阻率和 NiSi 与 Si NW 接触的接触电阻率被研究为砷（+）离子注入剂量和线材横截面面积的函数。与未应变情况相比，由于应变硅 NWs 的电子迁移率增强，所有掺杂浓度下的电阻率都较低。对于所有注入剂量，都观察到随着 NWs 横截面的减小，电阻率增加。这归因于掺杂剂失活的发生。比较单轴拉伸应变和未应变 Si NWs 的硅化，发现 NiSi/Si NW 的硅化速度和接触电阻率没有差异。对于 NiSi 与应变和未应变 Si NW 的接触，获得了低至 1.2 x 10(-8) Omega cm(-2)的接触电阻率。与平面接触相比，NiSi/Si NW 接触电阻率低两个数量级。
