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通过 Kelvin 探针力显微镜对单个功能化石墨烯片的局部电压降进行表征。

Local voltage drop in a single functionalized graphene sheet characterized by Kelvin probe force microscopy.

机构信息

Werkstoffe der Elektrotechnik and CeNIDE, Universität Duisburg-Essen, 47057 Duisburg, Germany.

出版信息

Nano Lett. 2011 Sep 14;11(9):3543-9. doi: 10.1021/nl201070c. Epub 2011 Aug 25.

DOI:10.1021/nl201070c
PMID:21848299
Abstract

We studied the local voltage drop in functionalized graphene sheets of subμm size under external bias conditions by Kelvin probe force microscopy. Using this noninvasive experimental approach, we measured ohmic current-voltage characteristics and an intrinsic conductivity of about 3.7 × 10(5) S/m corresponding to a sheet resistance of 2.7 kΩ/sq under ambient conditions for graphene produced via thermal reduction of graphite oxide. The contact resistivity between functionalized graphene and metal electrode was found to be <6.3 × 10(-7) Ωcm(2).

摘要

我们通过 Kelvin 探针力显微镜研究了亚微米尺寸功能化石墨烯片在外部偏压条件下的局部电压降。通过这种非侵入性的实验方法,我们测量了欧姆电流-电压特性和大约 3.7×10(5) S/m 的本征电导率,对应于在环境条件下通过热还原氧化石墨产生的石墨烯的片电阻为 2.7 kΩ/sq。我们发现功能化石墨烯与金属电极之间的接触电阻 <6.3×10(-7) Ωcm(2)。

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