State Key Laboratory for Mesoscopic Physics, Department of Physics, Peking University, Beijing 100871, People's Republic of China.
Nanotechnology. 2011 Sep 16;22(37):375201. doi: 10.1088/0957-4484/22/37/375201. Epub 2011 Aug 18.
A seven orders of magnitude increase in the current on/off ratio of ZnO nanowire field-effect transistors (FETs) after Ga( + ) irradiation was observed. Transmission electron microscopy characterization revealed that the surface crystal quality of the ZnO nanowire was improved via the Ga( + ) treatment. The Ga( + ) irradiation efficiently reduces chemisorption effects and decreases oxygen vacancies in the surface layer. The enhanced performance of the nanowire FET was attributed to the decrease of surface trapped electrons and the decrease in carrier concentration.
经过 Ga(+)辐照后，氧化锌纳米线场效应晶体管（FET）的电流开关比提高了七个数量级。透射电子显微镜的特性分析表明，通过 Ga(+)处理改善了 ZnO 纳米线的表面晶体质量。Ga(+)辐照有效地减少了化学吸附效应，并减少了表面层中的氧空位。纳米线 FET 性能的提高归因于表面俘获电子的减少和载流子浓度的降低。
