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位图案化介质的制作与特性研究,比特密度超过 1.5 Tbit/in2。

Fabrication and characterization of bit-patterned media beyond 1.5 Tbit/in2.

机构信息

Institute of Materials Research and Engineering, A*STAR, Singapore.

出版信息

Nanotechnology. 2011 Sep 23;22(38):385301. doi: 10.1088/0957-4484/22/38/385301. Epub 2011 Aug 25.

DOI:10.1088/0957-4484/22/38/385301
PMID:21865632
Abstract

We fabricated bit-patterned media (BPM) at densities as high as 3.3 Tbit/in(2) using a process consisting of high-resolution electron-beam lithography followed directly by magnetic film deposition. By avoiding pattern transfer processes such as etching and liftoff that inherently reduce pattern fidelity, the resolution of the final pattern was kept close to that of the lithographic step. Magnetic force microscopy (MFM) showed magnetic isolation of the patterned bits at 1.9 Tbit/in(2), which was close to the resolution limit of the MFM. The method presented will enable studies on magnetic bits packed at ultra-high densities, and can be combined with other scalable patterning methods such as templated self-assembly and nanoimprint lithography for high-volume manufacturing.

摘要

我们使用一种由高分辨率电子束光刻直接 followed 磁膜沉积组成的工艺,在高达 3.3 Tbit/in(2)的密度下制造了位图案介质 (BPM)。通过避免诸如蚀刻和剥离等固有降低图案保真度的图案转移工艺,最终图案的分辨率保持接近光刻步骤的分辨率。磁力显微镜 (MFM) 显示在 1.9 Tbit/in(2)时图案化位的磁性隔离,这接近 MFM 的分辨率极限。所提出的方法将能够研究以超高密度封装的磁性位,并且可以与其他可扩展的图案化方法(例如模板自组装和纳米压印光刻)结合用于批量生产。

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