Institut für Anorganische und Analytische Chemie, Johannes Gutenberg-Universtität, 55099 Mainz, Germany.
Phys Rev Lett. 2011 Jul 22;107(4):047202. doi: 10.1103/PhysRevLett.107.047202. Epub 2011 Jul 18.
We present a rational design scheme intended to provide stable high spin polarization at the interfaces of the magnetoresistive junctions by fulfilling the criteria of structural and chemical compatibilities at the interface. This can be realized by joining the semiconducting and half-metallic Heusler materials with similar structures. The present first-principles calculations verify that the interface remains half-metallic if the nearest interface layers effectively form a stable Heusler material with the properties intermediately between the surrounding bulk parts. This leads to a simple rule for selecting the proper combinations.
我们提出了一个合理的设计方案，旨在通过满足界面的结构和化学相容性标准，在磁电阻结的界面处提供稳定的高自旋极化。这可以通过将具有相似结构的半导体和半金属 Heusler 材料连接起来实现。本第一性原理计算验证了，如果最近的界面层有效地形成了一种具有周围体相部分之间的中间性质的稳定 Heusler 材料，则界面仍然保持半金属性质。这就为选择合适的组合提供了一个简单的规则。
