ReCFI, Department of Physics and Astronomy, Seoul National University, Seoul 151-747, Korea.
Phys Rev Lett. 2011 Jul 29;107(5):057602. doi: 10.1103/PhysRevLett.107.057602.
We report on nanoscale strain gradients in ferroelectric HoMnO(3) epitaxial thin films, resulting in a giant flexoelectric effect. Using grazing-incidence in-plane x-ray diffraction, we measured strain gradients in the films, which were 6 or 7 orders of magnitude larger than typical values reported for bulk oxides. The combination of transmission electron microscopy, electrical measurements, and electrostatic calculations showed that flexoelectricity provides a means of tuning the physical properties of ferroelectric epitaxial thin films, such as domain configurations and hysteresis curves.
我们报告了铁电 HoMnO(3)外延薄膜中的纳米级应变梯度,导致了巨大的挠曲电效应。通过掠入射面内 X 射线衍射,我们测量了薄膜中的应变梯度,其量级比报道的体氧化物的典型值大 6 到 7 个数量级。透射电子显微镜、电测量和静电计算的结合表明,挠曲电提供了一种调节铁电外延薄膜物理性质的手段,如畴结构和滞后曲线。