Liu Heng, Lai Qinglin, Fu Jun, Zhang Shijie, Fu Zhaoming, Zeng Hualing
International Center for Quantum Design of Functional Materials (ICQD), Hefei National Research Center for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei, 230026, China.
CAS Key Laboratory of Strongly Coupled Quantum Matter Physics, Department of Physics, University of Science and Technology of China, Hefei, Anhui, 230026, China.
Nat Commun. 2024 May 29;15(1):4556. doi: 10.1038/s41467-024-48892-z.
The universal flexoelectric effect in solids provides a mechanical pathway for controlling electric polarization in ultrathin ferroelectrics, eliminating potential material breakdown from a giant electric field at the nanoscale. One challenge of this approach is arbitrary implementation, which is strongly hindered by one-way switching capability. Here, utilizing the innate flexibility of van der Waals materials, we demonstrate that ferroelectric polarization and domain structures can be mechanically, reversibly, and arbitrarily switched in two-dimensional CuInPS via the nano-tip imprinting technique. The bidirectional flexoelectric control is attributed to the extended tip-induced deformation in two-dimensional systems with innate flexibility at the atomic scale. By employing an elastic substrate, artificial ferroelectric nanodomains with lateral sizes as small as ~80 nm are noninvasively generated in an area of 1 μm, equal to a density of 31.4 Gbit/in. Our results highlight the potential applications of van der Waals ferroelectrics in data storage and flexoelectronics.
固体中的普遍挠曲电效应为控制超薄铁电体中的电极化提供了一条机械途径,消除了纳米尺度下巨大电场导致的潜在材料击穿。这种方法的一个挑战是任意实现,单向开关能力严重阻碍了这一点。在这里,利用范德华材料固有的柔韧性,我们证明了通过纳米尖端压印技术,可以在二维CuInPS中对铁电极化和畴结构进行机械的、可逆的和任意的切换。双向挠曲电控制归因于在具有原子尺度固有柔韧性的二维系统中扩展的尖端诱导变形。通过使用弹性衬底,在1μm²的区域内无创地产生了横向尺寸小至约80nm的人工铁电纳米畴,密度相当于31.4Gbit/in²。我们的结果突出了范德华铁电体在数据存储和挠曲电子学中的潜在应用。