Department of Geological Sciences and Geotechnologies, Universita degli Studi di Milano Bicocca, Piazza della Scienza 4, I-20126 Milano, Italy.
Langmuir. 2011 Oct 4;27(19):12008-15. doi: 10.1021/la2025999. Epub 2011 Sep 12.
The integration of nanoscale processes and devices demands fabrication routes involving rapid, cost-effective steps, preferably carried out under ambient conditions. The realization of the metal/organic semiconductor interface is one of the most demanding steps of device fabrication, since it requires mechanical and/or thermal treatments which increment costs and are often harmful in respect to the active layer. Here, we provide a microscopic analysis of a room temperature, electroless process aimed at the deposition of a nanostructured metallic silver layer with controlled coverage atop the surface of single crystals and thin films of organic semiconductors. This process relies on the reaction of aqueous AgF solutions with the nonwettable crystalline surface of donor-type organic semiconductors. It is observed that the formation of a uniform layer of silver nanoparticles can be accomplished within 20 min contact time. The electrical characterization of two-terminal devices performed before and after the aforementioned treatment shows that the metal deposition process is associated with a redox reaction causing the p-doping of the semiconductor.
纳米级工艺和器件的集成需要涉及快速、具有成本效益的制造路线，最好在环境条件下进行。金属/有机半导体界面的实现是器件制造中最具挑战性的步骤之一，因为它需要机械和/或热处理，这会增加成本，并且通常对有源层有害。在这里，我们提供了一个微观分析，研究了一种室温无电镀工艺，旨在在单晶和有机半导体薄膜的表面上沉积具有受控覆盖率的纳米结构金属银层。该工艺依赖于含氟银水溶液与供体型有机半导体的非润湿晶面之间的反应。可以观察到，在 20 分钟的接触时间内，可以完成均匀的银纳米粒子层的形成。在进行上述处理之前和之后对两电极器件进行的电特性分析表明，金属沉积过程与导致半导体 p 掺杂的氧化还原反应有关。
