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可变剪接通过在第一个 S3-S4 连接环上切换一个氨基酸来调节 1 型电压门控钠离子通道的失活。

Alternative splicing modulates inactivation of type 1 voltage-gated sodium channels by toggling an amino acid in the first S3-S4 linker.

机构信息

Department of Clinical and Experimental Epilepsy, UCL Institute of Neurology, London WC1N 3BG, United Kingdom.

出版信息

J Biol Chem. 2011 Oct 21;286(42):36700-8. doi: 10.1074/jbc.M111.250225. Epub 2011 Sep 2.

Abstract

Voltage-gated sodium channels underlie the upstroke of action potentials and are fundamental to neuronal excitability. Small changes in the behavior of these channels are sufficient to change neuronal firing and trigger seizures. These channels are subject to highly conserved alternative splicing, affecting the short linker between the third transmembrane segment (S3) and the voltage sensor (S4) in their first domain. The biophysical consequences of this alternative splicing are incompletely understood. Here we focus on type 1 sodium channels (Nav1.1) that are implicated in human epilepsy. We show that the functional consequences of alternative splicing are highly sensitive to recording conditions, including the identity of the major intracellular anion and the recording temperature. In particular, the inactivation kinetics of channels containing the alternate exon 5N are more sensitive to intracellular fluoride ions and to changing temperature than channels containing exon 5A. Moreover, Nav1.1 channels containing exon 5N recover from inactivation more rapidly at physiological temperatures. Three amino acids differ between exons 5A and 5N. However, the changes in sensitivity and stability of inactivation were reproduced by a single conserved change from aspartate to asparagine in channels containing exon 5A, which was sufficient to make them behave like channels containing the complete exon 5N sequence. These data suggest that splicing at this site can modify the inactivation of sodium channels and reveal a possible interaction between splicing and anti-epileptic drugs that stabilize sodium channel inactivation.

摘要

电压门控钠离子通道是动作电位上升的基础,也是神经元兴奋性的基础。这些通道行为的微小变化足以改变神经元的放电并引发癫痫发作。这些通道经历高度保守的可变剪接,影响其第一个结构域中第三跨膜片段(S3)和电压传感器(S4)之间的短连接。这种可变剪接的生物物理后果尚未完全理解。在这里,我们重点研究与人类癫痫有关的 1 型钠离子通道(Nav1.1)。我们表明,可变剪接的功能后果对记录条件高度敏感,包括主要的细胞内阴离子和记录温度。特别是,含有替代外显子 5N 的通道的失活动力学对细胞内氟化物离子和温度变化比含有外显子 5A 的通道更敏感。此外,在生理温度下,含有外显子 5N 的 Nav1.1 通道从失活中更快地恢复。外显子 5A 和 5N 之间有三个氨基酸不同。然而,通过将含有外显子 5A 的通道中的天冬氨酸突变为天冬酰胺,可以重现失活敏感性和稳定性的变化,这足以使它们的行为类似于含有完整外显子 5N 序列的通道。这些数据表明,该位点的剪接可以改变钠离子通道的失活,并揭示了剪接与稳定钠离子通道失活的抗癫痫药物之间可能存在的相互作用。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/d3b8/3196094/c72c491d8208/zbc0491183970001.jpg

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