在基于氮化镓的发光二极管上实现铟锡氧化物（ITO）直接欧姆接触结构。

Implementation of an indium-tin-oxide (ITO) direct-Ohmic contact structure on a GaN-based light emitting diode.

作者信息

Liu Yi-Jung, Huang Chien-Chang, Chen Tai-You, Hsu Chi-Shiang, Liou Jian-Kai, Tsai Tsung-Yuan, Liu Wen-Chau

机构信息

Department of Electrical Engineering, Institute of Microelectronics, National Cheng-Kung University, University Road, Tainan 7010, Taiwan.

出版信息

Opt Express. 2011 Jul 18;19(15):14662-70. doi: 10.1364/OE.19.014662.

DOI:10.1364/OE.19.014662

PMID:21934828

Abstract

A GaN-based light-emitting diode (LED) with a direct-Ohmic contact structure, formed by an indium-tin-oxide (ITO) transparent film and Au thermal-diffused and removed layer, is studied. By depositing an Au metallic film on the Mg-doped GaN layer followed by thermal annealing and removed processes, an ITO direct-Ohmic contact at p-GaN/ITO interface is formed. An enhanced light output power of 18.0% is also found at this condition. This is mainly attributed to the larger and more uniform light-emission area resulted from the improved current spreading capability by the use of an ITO direct-Ohmic contact structure.

摘要

研究了一种基于氮化镓（GaN）的发光二极管（LED），其具有由铟锡氧化物（ITO）透明薄膜和金热扩散及去除层形成的直接欧姆接触结构。通过在掺镁氮化镓层上沉积金金属薄膜，随后进行热退火和去除工艺，在p型氮化镓/铟锡氧化物界面形成了铟锡氧化物直接欧姆接触。在此条件下还发现光输出功率提高了18.0%。这主要归因于使用铟锡氧化物直接欧姆接触结构改善了电流扩展能力，从而产生了更大且更均匀的发光区域。