具有石墨烯/铟锡氧化物透明层的氮化镓基发光二极管。
GaN-based light-emitting diodes with graphene/indium tin oxide transparent layer.
作者信息
Lai Wei-Chih, Lin Chih-Nan, Lai Yi-Chun, Yu Peichen, Chi Gou Chung, Chang Shoou-Jinn
出版信息
Opt Express. 2014 Mar 10;22 Suppl 2:A396-401. doi: 10.1364/OE.22.00A396.
We have demonstrated a gallium nitride (GaN)-based green light-emitting diode (LED) with graphene/indium tin oxide (ITO) transparent contact. The ohmic characteristic of the p-GaN and graphene/ITO contact could be preformed by annealing at 500 °C for 5 min. The specific contact resistance of p-GaN/graphene/ITO (3.72E-3 Ω·cm²) is one order less than that of p-GaN/ITO. In addition, the 20-mA forward voltage of LEDs with graphene/ITO transparent (3.05 V) is 0.09 V lower than that of ITO LEDs (3.14 V). Besides, We have got an output power enhancement of 11% on LEDs with graphene/ITO transparent contact.
我们展示了一种具有石墨烯/铟锡氧化物（ITO）透明接触的氮化镓（GaN）基绿色发光二极管（LED）。p-GaN与石墨烯/ITO接触的欧姆特性可通过在500°C下退火5分钟来实现。p-GaN/石墨烯/ITO的比接触电阻（3.72E-3Ω·cm²）比p-GaN/ITO的比接触电阻小一个数量级。此外，具有石墨烯/ITO透明接触的LED在20 mA正向电流下的电压（3.05 V）比ITO LED（3.14 V）低0.09 V。此外，我们发现具有石墨烯/ITO透明接触的LED的输出功率提高了11%。
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