Institute of Industrial Science, University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan.
Nano Lett. 2011 Nov 9;11(11):4542-6. doi: 10.1021/nl201448q. Epub 2011 Oct 4.
We have fabricated graphene/graphene oxide/graphene (G/GO/G) junctions by local anodic oxidation lithography using atomic force microscopy (AFM). The conductance of the G/GO/G junction decreased with the bias voltage applied to the AFM cantilever V(tip). For G/GO/G junctions fabricated with large and small |V(tip)|. GO was semi-insulating and semiconducting, respectively. AFM-based LAO lithography can be used to locally oxidize graphene with various oxidation levels and achieve tunability from semiconducting to semi-insulating GO.
我们通过原子力显微镜（AFM）的局部阳极氧化光刻法制造了石墨烯/氧化石墨烯/石墨烯（G/GO/G）结。G/GO/G 结的电导随施加到 AFM 悬臂 V（尖端）上的偏置电压 V（尖端）而降低。对于用大的和小的 V（尖端）制造的 G/GO/G 结，GO 分别是半绝缘和半导体。基于 AFM 的 LAO 光刻可以用于局部氧化具有不同氧化水平的石墨烯，并实现从半导体到半绝缘 GO 的可调谐性。
