Department of Electrical Engineering, University of Nebraska-Lincoln, Lincoln, Nebraska 68588-0511, USA.
ACS Appl Mater Interfaces. 2011 Oct;3(10):4120-5. doi: 10.1021/am201010h. Epub 2011 Oct 10.
Diamond films were deposited on silicon and tungsten carbide substrates in open air through laser-assisted combustion synthesis. Laser-induced resonant excitation of ethylene molecules was achieved in the combustion process to promote diamond growth rate. In addition to microstructure study by scanning electron microscopy, Raman spectroscopy was used to analyze the phase purity and residual stress of the diamond films. High-purity diamond films were obtained through laser-assisted combustion synthesis. The levels of residual stress were in agreement with corresponding thermal expansion coefficients of diamond, silicon, and tungsten carbide. Diamond-film purity increases while residual stress decreases with an increasing film thickness. Diamond films deposited on silicon substrates exhibit higher purity and lower residual stress than those deposited on tungsten carbide substrates.
金刚石薄膜通过激光辅助燃烧合成在空气中沉积在硅和碳化钨衬底上。在燃烧过程中实现了乙烯分子的激光诱导共振激发，以促进金刚石生长速率。除了通过扫描电子显微镜进行微观结构研究外，还使用拉曼光谱分析了金刚石薄膜的相纯度和残余应力。通过激光辅助燃烧合成获得了高纯度的金刚石薄膜。残余应力的水平与金刚石、硅和碳化钨的相应热膨胀系数一致。随着膜厚度的增加，金刚石膜的纯度增加，残余应力降低。沉积在硅衬底上的金刚石薄膜比沉积在碳化钨衬底上的金刚石薄膜具有更高的纯度和更低的残余应力。
