Department of Electrical Engineering, University of Nebraska, Lincoln, Nebraska 68588-0511, USA.
ACS Appl Mater Interfaces. 2011 Apr;3(4):1134-9. doi: 10.1021/am101271b. Epub 2011 Apr 11.
The quality of diamond films deposited on cemented tungsten carbide substrates (WC-Co) is limited by the presence of the cobalt binder. The cobalt in the WC-Co substrates enhances the formation of nondiamond carbon on the substrate surface, resulting in a poor film adhesion and a low diamond quality. In this study, we investigated pretreatments of WC-Co substrates in three different approaches, namely, chemical etching, laser etching, and laser etching followed by acid treatment. The laser produces a periodic surface pattern, thus increasing the roughness and releasing the stress at the interfaces between the substrate and the grown diamond film. Effects of these pretreatments have been analyzed in terms of microstructure and cobalt content. Raman spectroscopy was conducted to characterize both the diamond quality and compressive residual stress in the films.
在硬质合金（WC-Co）基底上沉积的金刚石薄膜的质量受到钴粘结剂的影响。WC-Co 基底中的钴会促进非金刚石碳在基底表面的形成，从而导致较差的薄膜附着力和较低的金刚石质量。在这项研究中，我们研究了 WC-Co 基底的三种预处理方法，即化学刻蚀、激光刻蚀和激光刻蚀后酸处理。激光会产生周期性的表面图案，从而增加粗糙度并释放基底和生长的金刚石薄膜之间界面的应力。这些预处理的效果从微观结构和钴含量两个方面进行了分析。拉曼光谱用于表征薄膜中的金刚石质量和压缩残余应力。
