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用于在可控沟道电势下测量有机薄膜晶体管局部电学特性的独立驱动四探针法

Independently driven four-probe method for local electrical characteristics in organic thin-film transistors under controlled channel potential.

作者信息

Yoshimoto S, Tsutsui T, Mukai K, Yoshinobu J

机构信息

The Institute for Solid State Physics, The University of Tokyo, 5-1-5 Kashiwanoha, Kashiwa, Chiba 277-8581, Japan.

出版信息

Rev Sci Instrum. 2011 Sep;82(9):093902. doi: 10.1063/1.3637489.

Abstract

We describe an independently driven four-probe method to investigate local channel mobility in organic field-effect transistors (OFETs). In OFET devices, probe-organic contact resistance affects device characteristics even in four-probe measurement because a change in contact resistance at the source probe induces a change in channel potential, resulting in different local carrier density. To overcome this problem, we introduced a feedback circuit between the source probe and a channel voltage probe to keep the channel potential constant. We demonstrate four-probe I-V measurement on a pentacene thin film (50 nm thick) under controlled channel potential. The feedback successfully enables us to separate contact resistance and channel resistance even under different contact conditions. We also measured four-probe resistance as a function of gate bias and channel probe position. The present results were in good agreement with two-dimensional model calculation by arranging four probes in a defect-free area; the mobility of the pentacene single grain was evaluated to be 0.25 cm(2)/(V s).

摘要

我们描述了一种独立驱动的四探针方法,用于研究有机场效应晶体管(OFET)中的局部沟道迁移率。在OFET器件中,即使在四探针测量中,探针与有机材料的接触电阻也会影响器件特性,因为源极探针处接触电阻的变化会引起沟道电势的变化,从而导致不同的局部载流子密度。为了克服这个问题,我们在源极探针和沟道电压探针之间引入了一个反馈电路,以保持沟道电势恒定。我们展示了在受控沟道电势下对并五苯薄膜(50纳米厚)进行的四探针I-V测量。该反馈成功地使我们即使在不同的接触条件下也能分离接触电阻和沟道电阻。我们还测量了四探针电阻作为栅极偏压和沟道探针位置的函数。通过将四个探针布置在无缺陷区域,目前的结果与二维模型计算结果吻合良好;并五苯单晶粒的迁移率估计为0.25 cm²/(V·s)。

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