Department of Materials Science and Engineering, University of California, Los Angeles, California 90095, USA.
Nanoscale. 2012 Mar 7;4(5):1412-21. doi: 10.1039/c1nr10847f. Epub 2011 Oct 10.
Metal silicides have been used in silicon technology as contacts to achieve high device performance and desired device functions. The growth and applications of silicide materials have recently attracted increasing interest for nanoscale device applications. Nanoscale silicide materials have been demonstrated with various synthetic approaches. Solid state reaction wherein high quality silicides form through diffusion of metal atoms into silicon nano-templates and the subsequent phase transformation caught significant attention for the fabrication of nanoscale Si devices. Very interestingly, studies on the diffusion and phase transformation processes at the nanoscale have indicated possible deviations from the bulk and the thin film system. Here we present a review of fabrication, growth kinetics, electronic properties and device applications of nanoscale silicides formed through solid state reaction.
金属硅化物已被用于硅技术中作为接触材料，以实现高性能器件和所需的器件功能。最近，纳米尺度器件应用引起了人们对硅化物材料的生长和应用的极大兴趣。已经通过各种合成方法证明了纳米尺度硅化物材料的存在。固态反应中，金属原子扩散进入硅纳米模板，随后发生相转变，从而形成高质量的硅化物，这种方法在纳米尺度 Si 器件的制造中引起了广泛关注。非常有趣的是，对纳米尺度下扩散和相变过程的研究表明，可能会偏离体相和薄膜体系。在这里，我们综述了通过固态反应形成的纳米尺度硅化物的制备、生长动力学、电子性质和器件应用。
