Energy Research Institute @ NTU, Nanyang Technological University, Singapore 637533.
Nanoscale. 2011 Nov;3(11):4640-6. doi: 10.1039/c1nr11083g. Epub 2011 Oct 10.
A novel chemically stable Zn-Sn-O nanocactus structure has been synthesized for the first time using a hydrothermal method. The Zn-Sn-O nanocactus structure comprises a Zn poor-Zn(2)SnO(4) plate and Zn-doped SnO(2) nanothorns growing on the plate, both of which have high electron mobilities. The nanocactus is used as the photoanode of dye-sensitized solar cells (DSSCs). The overall power conversion efficiency (PCE) for the Zn-Sn-O nanocactus film reaches 2.21%, which is twice the previous reported efficiency of pure SnO(2). Electrochemical impedance spectroscopy (EIS) measurements show that the Zn-Sn-O nanocactus film has a good effective diffusion length and high intrinsic electron mobility. After TiCl(4) treatment of the Zn-Sn-O nanocactus film, the current density increases nearly three times and the PCE increases to 6.62%, which compares favourably with the P25 DSSCs (6.97%) and is much higher than that of the SnO(2) (1.04%) or Zn(2)SnO(4) (3.7%)-based DSSCs.
首次使用水热法合成了一种新型化学稳定的 Zn-Sn-O 纳米仙人掌结构。Zn-Sn-O 纳米仙人掌结构由贫锌的 Zn2SnO4 板和生长在该板上的 Zn 掺杂 SnO2 纳米刺组成，两者都具有高电子迁移率。纳米仙人掌被用作染料敏化太阳能电池 (DSSC) 的光阳极。Zn-Sn-O 纳米仙人掌薄膜的整体功率转换效率 (PCE) 达到 2.21%，是纯 SnO2 先前报道效率的两倍。电化学阻抗谱 (EIS) 测量表明，Zn-Sn-O 纳米仙人掌薄膜具有良好的有效扩散长度和高本征电子迁移率。对 Zn-Sn-O 纳米仙人掌薄膜进行 TiCl4 处理后，电流密度增加近三倍，PCE 增加到 6.62%，与 P25 DSSC（6.97%）相比具有竞争力，并且远高于基于 SnO2（1.04%）或 Zn2SnO4（3.7%）的 DSSC。
