Nambu Y, Takahashi S, Yoshino K, Tanaka A, Fujiwara M, Sasaki M, Tajima A, Yorozu S, Tomita A
Green Innovations Research Laboratories, NEC Corporation, 34 Miyukigaoka, Tsukuba, Ibaraki 305-8501, Japan.
Opt Express. 2011 Oct 10;19(21):20531-41. doi: 10.1364/OE.19.020531.
An efficient and low-noise 1.244-GHz gating InGaAs single-photon avalanche photodiode (SAPD) was developed for a high-speed quantum key distribution (QKD) system. An afterpulsing probability of 0.61% and a dark count probability per gate of 0.71 ×10-6 were obtained at a detection efficiency of 10.9% for 1.55-µm photons. Furthermore, our SAPD successfully coped with high detection efficiency (≤ 25%) and quite low afterpulsing noise (≤ 3% for ≤ 25% efficiency) at the same time. Its potential was verified using the actual QKD setups installed over a metropolitan area network.
为高速量子密钥分发（QKD）系统开发了一种高效且低噪声的1.244 GHz选通铟镓砷单光子雪崩光电二极管（SAPD）。对于1.55 µm光子，在10.9%的探测效率下，获得了0.61%的后脉冲概率和每门0.71×10⁻⁶的暗计数概率。此外，我们的SAPD同时成功实现了高探测效率（≤25%）和相当低的后脉冲噪声（效率≤25%时≤3%）。通过在城域网上安装的实际QKD装置验证了其潜力。
