Institut für Experimentelle Physik II, Halbleiterphysik, Universität Leipzig, Germany.
Adv Mater. 2011 Dec 1;23(45):5383-6. doi: 10.1002/adma.201103087. Epub 2011 Oct 14.
Tungsten oxide is currently used as gate insulator in pH-sensing ion-sensitive field-effect transistors (ISFETs) and in electrochromic devices. Its great potential as a high-κ dielectric with high transparency and temperature stability is reported. Owing to the low gate voltage sweep necessary to turn the transistor on and off, a possible application could be as a low-voltage pixel driver in active-matrix displays in harsh environments.
氧化钨目前被用作 pH 感应离子敏感场效应晶体管（ISFET）和电致变色器件的栅极绝缘体。据报道，它具有作为高介电常数材料的巨大潜力，具有高透明度和温度稳定性。由于晶体管导通和关断所需的栅极电压扫描较低，因此它可能被用作恶劣环境下有源矩阵显示器中的低压像素驱动器。
