Division of Advanced Materials, Korea Research Institute of Chemical Technology, Daejeon 305-600, Republic of Korea.
Langmuir. 2013 Jun 11;29(23):7143-50. doi: 10.1021/la401356u. Epub 2013 Jun 3.
We report a simple approach to modify the surface of a polyimide gate insulator with an yttrium oxide interlayer for aqueous-solution-processed ZnO thin-film transistors. It is expected that the yttrium oxide interlayer will provide a surface that is more chemically compatible with the ZnO semiconductor than is bare polyimde. The field-effect mobility and the on/off current ratio of the ZnO TFT with the YOx/polyimide gate insulator were 0.456 cm(2)/V·s and 2.12 × 10(6), respectively, whereas the ZnO TFT with the polyimide gate insulator was inactive.
我们报告了一种简单的方法，通过在聚酰亚胺栅极绝缘层上添加氧化钇（YOx）中间层来修饰其表面，从而制备出可在水溶液中加工的氧化锌（ZnO）薄膜晶体管。预计氧化钇中间层将提供一种比原始聚酰亚胺更能与 ZnO 半导体兼容的表面。具有 YOx/聚酰亚胺栅极绝缘层的 ZnO TFT 的场效应迁移率和开关电流比分别为 0.456 cm(2)/V·s 和 2.12×10(6)，而具有聚酰亚胺栅极绝缘层的 ZnO TFT 则没有活性。
