College of Physics and Microelectronics Science, Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, Hunan University, Changsha 410082, China.
Nano Lett. 2011 Nov 9;11(11):5085-9. doi: 10.1021/nl203529h. Epub 2011 Oct 21.
We demonstrated a substrate-moving vapor-liquid-solid (VLS) route for growing composition gradient ZnCdSSe alloy nanowires. Relying on temperature-selected composition deposition along their lengths, single tricolor ZnCdSSe alloy nanowires with engineerable band gap covering the entire visible range were obtained. The photometric property of these tricolor nanowires, which was determined by blue-, green-, and red-color emission intensities, can be in turn controlled by their corresponding emission lengths. More particularly, under carefully selected growth conditions, on-nanowire white light emission has been achieved. Band-gap-engineered semiconductor alloy nanowires demonstrated here may find applications in broad band light absorption and emission devices.
我们展示了一种基于底物移动的气相-液相-固相反（VLS）方法来生长组成渐变的 ZnCdSSe 合金纳米线。通过沿其长度进行温度选择的组成沉积，成功获得了具有可调节带隙的单根三色 ZnCdSSe 合金纳米线，其带隙覆盖整个可见光范围。这些三色纳米线的光度特性可通过它们的相应发射长度来控制，具体来说，通过蓝色、绿色和红色发射强度来确定。更特别的是，在仔细选择的生长条件下，实现了纳米线上的白光发射。这里展示的带隙工程半导体合金纳米线可应用于宽带光吸收和发射器件中。
