低浓度锡掺杂对化学浴沉积法生长的硫化镉薄膜光学性质的影响。

Effect of low concentration Sn doping on optical properties of CdS films grown by CBD technique.

作者信息

Jafari Atefeh, Zakaria Azmi, Rizwan Zahid, Mohd Ghazali Mohd Sabri

机构信息

Advanced Materials and Nanotechnology Laboratory, Institute of Advanced Technology, Universiti Putra Malaysia, 43400 UPM Serdang, Selangor, Malaysia; E-Mail:

出版信息

Int J Mol Sci. 2011;12(9):6320-8. doi: 10.3390/ijms12096320. Epub 2011 Sep 23.

DOI:10.3390/ijms12096320

PMID:22016661

原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC3189785/

Abstract

Thin and transparent films of doped cadmium sulfide (CdS) were obtained on commercial glass substrates by Chemical Bath Deposition (CBD) technique. The films were doped with low concentration of Sn, and annealed in air at 300 °C for 45 min. The morphological characterization of the films with different amounts of dopant was made using SEM and EDAX analysis. Optical properties of the films were evaluated by measuring transmittance using the UV-vis spectrophotometer. A comparison of the results revealed that lower concentration of Sn doping improves transmittance of CdS films and makes them suitable for application as window layer of CdTe/CIGS solar cells.

摘要

通过化学浴沉积（CBD）技术在商用玻璃基板上制备了掺杂硫化镉（CdS）的薄透明薄膜。这些薄膜用低浓度的锡进行掺杂，并在空气中于300°C退火45分钟。使用扫描电子显微镜（SEM）和能量色散X射线分析（EDAX）对不同掺杂量的薄膜进行形态表征。通过使用紫外可见分光光度计测量透过率来评估薄膜的光学性能。结果比较表明，较低浓度的锡掺杂提高了CdS薄膜的透过率，使其适用于作为碲化镉/铜铟镓硒（CdTe/CIGS）太阳能电池的窗口层。