Koo Bon-Ryul, Ahn Hyo-Jin
J Nanosci Nanotechnol. 2014 Dec;14(12):9632-6. doi: 10.1166/jnn.2014.10150.
We synthesized Sn-doped In2O3 (Indium tin oxide, ITO) thin films using electrospray and spin-coating. Scanning electron microscopy, atomic force spectroscopy, X-ray diffraction, X-ray photoelectron spectroscopy, Hall-effect measurement, and UV-vis spectrophotometry measurements were performed to investigate the morphological, structural, chemical, electrical, and optical properties of the electrosprayed ITO films with a sol-layer coating for surface modification. To obtain the optimum performance of the resultant ITO thin films after surface modification, we heat-treated them at four different temperatures of 450 degrees C (sample A), 550 degrees C (sample B), 650 degrees C (sample C), and 750 degrees C (sample D) using microwave heating. Surface modified ITO thin films calcined at 550 degrees C (sample B) using electrospray and spin-coating are observed to have superior resistivity (9.9 x 10(-3) 2 Ω x cm) and optical transmittance (-92.08%) owing to the improved densification of the ITO surface by spin-coating and the formation of uniform ITO thin films by electrospraying.
我们采用电喷雾和旋涂法合成了掺锡氧化铟（ITO）薄膜。利用扫描电子显微镜、原子力光谱、X射线衍射、X射线光电子能谱、霍尔效应测量和紫外-可见分光光度法对经溶胶层涂层表面改性的电喷雾ITO薄膜的形貌、结构、化学、电学和光学性质进行了研究。为了使表面改性后的ITO薄膜获得最佳性能，我们使用微波加热在450℃（样品A）、550℃（样品B）、650℃（样品C）和750℃（样品D）这四个不同温度下对其进行了热处理。观察发现，采用电喷雾和旋涂法在550℃下煅烧的表面改性ITO薄膜具有优异的电阻率（9.9×10⁻³Ω·cm）和光学透过率（-92.08%），这归因于旋涂法使ITO表面致密化程度提高以及电喷雾法形成了均匀的ITO薄膜。
