Rizwan Zahid, Zakaria Azmi, Mohd Ghazali Mohd Sabri, Jafari Atefeh, Din Fasih Ud, Zamiri Reza
Department of Physics, Faculty of Science, Universiti Putra Malaysia, 43400 UPM Serdang, Selangor, Malaysia; E-Mails:
Int J Mol Sci. 2011 Feb 22;12(2):1293-305. doi: 10.3390/ijms12021293.
Two different concentrations of CdCl(2) and (NH(2))(2)CS were used to prepare CdS thin films, to be deposited on glass substrate by chemical bath deposition (CBD) technique. CdCl(2) (0.000312 M and 0.000625 M) was employed as a source of Cd(2+) while (NH(2))(2)CS (0.00125 M and 0.000625 M) for S(2-) at a constant bath temperature of 70 °C. Adhesion of the deposited films was found to be very good for all the solution concentrations of both reagents. The films were air-annealed at a temperature between 200 °C to 360 °C for one hour. The minimum thickness was observed to be 33.6 nm for film annealed at 320 °C. XRD analyses reveal that the films were cubic along with peaks of hexagonal phase for all film samples. The crystallite size of the films decreased from 41.4 nm to 7.4 nm with the increase of annealing temperature for the CdCl(2) (0.000312 M). Optical energy band gap (E(g)), Urbach energy (E(u)) and absorption coefficient (α) have been calculated from the transmission spectral data. These parameters have been discussed as a function of annealing temperature and solution concentration. The best transmission (about 97%) was obtained for the air-annealed films at higher temperature at CdCl(2) (0.000312 M).
使用两种不同浓度的氯化镉（CdCl₂）和硫脲（(NH₂)₂CS）来制备硫化镉（CdS）薄膜，并通过化学浴沉积（CBD）技术将其沉积在玻璃基板上。氯化镉（0.000312 M和0.000625 M）用作镉离子（Cd²⁺）的来源，而硫脲（0.00125 M和0.000625 M）用作硫离子（S²⁻）的来源，浴温恒定为70°C。结果发现，对于两种试剂的所有溶液浓度，沉积薄膜的附着力都非常好。这些薄膜在200°C至360°C的温度下进行空气退火1小时。观察到在320°C退火的薄膜的最小厚度为33.6 nm。X射线衍射（XRD）分析表明，所有薄膜样品的薄膜均为立方相，并伴有六方相的峰。对于氯化镉（0.000312 M），随着退火温度的升高，薄膜的微晶尺寸从41.4 nm减小到7.4 nm。已根据透射光谱数据计算出光学带隙（E(g)）、乌尔巴赫能量（E(u)）和吸收系数（α）。已将这些参数作为退火温度和溶液浓度的函数进行了讨论。对于在较高温度下空气退火的氯化镉（0.000312 M）薄膜，获得了最佳透射率（约97%）。
