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基于 AlGaInAs/InP 单片集成 DFB 激光阵列的 CWDM 光源。

CWDM source based on AlGaInAs/InP monolithically integrated DFB laser array.

机构信息

School of Engineering, University of Glasgow, Glasgow, G12 8LT, United Kingdom.

出版信息

Opt Lett. 2011 Nov 1;36(21):4188-90. doi: 10.1364/OL.36.004188.

Abstract

The monolithic integration of four 1.5 μm range AlGaInAs/InP distributed feedback lasers with a 4×1 multimode-interference optical combiner, a curved semiconductor optical amplifier, and an electro-absorption modulator using relatively simple technologies--sidewall grating and quantum well intermixing--has been demonstrated. The four channels span the wavelength range of 1530 to 1566 nm with a channel spacing of 12 nm. The epitaxial structure was designed to produce a far-field pattern as small as 21.2°×25.1°, producing a coupling efficiency with an angled-end single-mode fiber at twice that of a conventional device design.

摘要

已经采用相对简单的技术(侧壁光栅和量子阱混合)实现了四个 1.5μm 范围的 AlGaInAs/InP 分布式反馈激光器、4×1 多模干涉光组合器、弯曲半导体光放大器和电吸收调制器的单片集成。这四个通道的波长范围为 1530 至 1566nm,通道间隔为 12nm。外延结构的设计使得远场模式小至 21.2°×25.1°,与传统器件设计相比,与倾斜端单模光纤的耦合效率提高了一倍。

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