Cervera Javier, Mafé Salvador
Facultat de Física, Universitat de València, E-46100 Burjassot, Spain.
J Nanosci Nanotechnol. 2011 Sep;11(9):7537-48. doi: 10.1166/jnn.2011.4743.
Nanostructures are potentially useful as building blocks to complement future electronics because of their high versatility and packing densities. The fabrication and characterization of particular nanostructures and the use of new theoretical tools to describe their properties are receiving much attention. However, the integration of these individual systems into general schemes that could perform simple tasks is also necessary because modern electronics operation relies on the concerted action of many basic units. We review here new conceptual schemes that can allow information processing with ligand or monolayer protected metallic nanoclusters (MPCs) on the basis of the experimentally demonstrated and theoretically described electrical characteristics of these nanostructures. In particular, we make use of the tunnelling current through a metallic nanocluster attached to the electrodes by ligands. The nanostructure is described as a single electron transistor (SET) that can be gated by an external potential. This fact permits exploiting information processing schemes in approximately defined arrays of MPCs. These schemes include: (i) binary, multivalued, and reversible logic gates; (ii) an associative memory and a synchronization circuit; and (iii) two signal processing nanodevices based on parallel arrays of MPCs and nanoswitches. In each case, the practical operation of the nanodevice is based on the SET properties of MPCs reported experimentally. We examine also some of the practical problems that should be addressed in future experimental realizations: the stochastic nature of the electron tunnelling, the relatively low operation temperatures, and the limited reliability caused by the weak signals involved and the nanostructure variability. The perspectives to solve these problems are based on the potentially high degree of scalability of the nanostructures.
纳米结构因其高度的通用性和堆积密度,作为构建未来电子器件的基础材料具有潜在的应用价值。特定纳米结构的制备与表征以及用于描述其性质的新理论工具的使用正受到广泛关注。然而,将这些单个系统集成到能够执行简单任务的通用方案中也是必要的,因为现代电子操作依赖于许多基本单元的协同作用。在此,我们回顾一些新的概念性方案,这些方案基于实验证明和理论描述的这些纳米结构的电学特性,能够利用配体或单层保护的金属纳米团簇(MPC)进行信息处理。特别是,我们利用通过配体连接到电极的金属纳米团簇的隧穿电流。该纳米结构被描述为一个可由外部电势控制的单电子晶体管(SET)。这一事实使得在大致确定的MPC阵列中开发信息处理方案成为可能。这些方案包括:(i)二进制、多值和可逆逻辑门;(ii)关联存储器和同步电路;以及(iii)基于MPC和纳米开关并行阵列的两个信号处理纳米器件。在每种情况下,纳米器件的实际操作都基于实验报道的MPC的SET特性。我们还研究了未来实验实现中应解决的一些实际问题:电子隧穿的随机性、相对较低的操作温度以及由弱信号和纳米结构变异性导致的有限可靠性。解决这些问题的前景基于纳米结构潜在的高度可扩展性。