Hou Xianghui, Choy Kwang-Leong, Liu Jun-Peng
Faculty of Engineering, Energy and Sustainability Research Division, The University of Nottingham, Nottingham, NG7 2RD, United Kingdom.
J Nanosci Nanotechnol. 2011 Sep;11(9):8114-9. doi: 10.1166/jnn.2011.5039.
Transparent conducting oxide (TCO) films have the remarkable combination of high electrical conductivity and optical transparency. There is always a strong motivation to produce TCO films with good performance at low cost. Electrostatic Spray Assisted Vapor Deposition (ESAVD), as a variant of chemical vapour deposition (CVD), is a non-vacuum and low-cost deposition method. Several types of TCO films have been deposited using ESAVD process, including indium tin oxide (ITO), antimony-doped tin oxide (ATO), and fluorine doped tin oxide (FTO). This paper reports the electrical and optical properties of TCO films produced by ESAVD methods, as well as the effects of post treatment by plasma hydrogenation on these TCO films. The possible mechanisms involved during plasma hydrogenation of TCO films are also discussed. Reduction and etching effect during plasma hydrogenation are the most important factors which determine the optical and electrical performance of TCO films.
透明导电氧化物（TCO）薄膜具有高导电性和光学透明性的显著组合。一直以来，人们都有强烈的动机以低成本生产具有良好性能的TCO薄膜。静电喷雾辅助气相沉积（ESAVD）作为化学气相沉积（CVD）的一种变体，是一种非真空且低成本的沉积方法。已经使用ESAVD工艺沉积了几种类型的TCO薄膜，包括氧化铟锡（ITO）、锑掺杂氧化锡（ATO）和氟掺杂氧化锡（FTO）。本文报道了通过ESAVD方法制备的TCO薄膜的电学和光学性质，以及等离子体氢化后处理对这些TCO薄膜的影响。还讨论了TCO薄膜等离子体氢化过程中可能涉及的机制。等离子体氢化过程中的还原和蚀刻效应是决定TCO薄膜光学和电学性能的最重要因素。
