Jun Myungsim, Park Youngsam, Hyun Younghoon, Choi Sung-Jin, Zyung Taehyung, Jang Moongyu
Power Control Device Team, Electronics and Telecommunications Research Institute (ETRI), Daejeon 305-700, Korea.
J Nanosci Nanotechnol. 2011 Aug;11(8):7339-42. doi: 10.1166/jnn.2011.4851.
In this paper, n/p-type nickel-silicided Schottky diodes were fabricated by incorporating antimony atoms near the nickel silicide/Si junction interface and the electrical characteristics were studied through measurements and simulations. The effective Schottky barrier height (SBH) for electron, extracted from the thermionic emission model, drastically decreased from 0.68 to less than 0.1 eV while that for hole slightly increased from 0.43 to 0.53 eV. In order to identify the current conduction mechanisms, the experimental current-temperature-voltage characteristics for the n-type diode were fitted based on various models for transport of charge carrier in Schottky diodes. As the result, the large change in effective SBH for electron is ascribed to trap-assisted tunneling rather than barrier height inhomogeneity.
在本文中，通过在硅化镍/硅结界面附近引入锑原子制备了n/p型硅化镍肖特基二极管，并通过测量和模拟研究了其电学特性。从热电子发射模型提取的电子有效肖特基势垒高度（SBH）从0.68大幅降至小于0.1 eV，而空穴的有效肖特基势垒高度则从0.43略微增加至0.53 eV。为了确定电流传导机制，基于肖特基二极管中载流子传输的各种模型，对n型二极管的实验电流-温度-电压特性进行了拟合。结果表明，电子有效SBH的大幅变化归因于陷阱辅助隧穿而非势垒高度不均匀性。
