Lee Youn-Seoung, Lee Yong-Hyuk, Ju Hyun-jin, Lee Won-Jun, Lee Hee Soo, Rha Sa-Kyun
Department of Information Communication Engineering, Hanbat National University, Daejon 305-719, Republic of Korea.
J Nanosci Nanotechnol. 2011 Jul;11(7):5795-9. doi: 10.1166/jnn.2011.4326.
An interpoly-stacked dielectric film with a SiO2/Si3N4/SiO2/Si (ONO) structure was prepared via the atomic-layer deposition method. The multilayer structure of the ONO film with triple interfaces was investigated via medium-energy ion scattering (MEIS). A few defects in the interface layer of the ONO structure were detected. From the X-ray photoelectron spectroscopy (XPS) results, it was presumed that the interface layer with defects in the MEIS result is due to the formation of an oxynitride layer on the unstable and rougher Si3N4 layer via. By measuring the I-V characteristics, the leakage current density and breakdown field of the ONO film were determined to be 3.4 x 10(-9) A/cm2 and 10.86 MV/cm, respectively. By estimation the C-V curve, the flat band (V(FB)) of the ONO film shifted to a negative voltage (-1.14 V), the dielectric constant (K(ONO)) of the ONO film was 5.79, and the effective interface-trapped charge density of the ONO film was about 4.96 x 10(11)/cm2.
通过原子层沉积法制备了具有SiO2/Si3N4/SiO2/Si（ONO）结构的层间堆叠介电薄膜。通过中能离子散射（MEIS）研究了具有三重界面的ONO薄膜的多层结构。检测到ONO结构界面层中的一些缺陷。根据X射线光电子能谱（XPS）结果推测，MEIS结果中存在缺陷的界面层是由于在不稳定且更粗糙的Si3N4层上通过形成氮氧化物层所致。通过测量I-V特性，确定ONO薄膜的漏电流密度和击穿场分别为3.4×10^(-9) A/cm2和10.86 MV/cm。通过估算C-V曲线，ONO薄膜的平带（V(FB)）向负电压（-1.14 V）移动，ONO薄膜的介电常数（K(ONO)）为5.79，ONO薄膜的有效界面陷阱电荷密度约为4.96×10^(11)/cm2。
