Flöhr Kilian, Liebmann Marcus, Sladek Kamil, Günel H Yusuf, Frielinghaus Robert, Haas Fabian, Meyer Carola, Hardtdegen Hilde, Schäpers Thomas, Grützmacher Detlev, Morgenstern Markus
II. Institute of Physics B and JARA-FIT, RWTH Aachen, 52074 Aachen, Germany.
Rev Sci Instrum. 2011 Nov;82(11):113705. doi: 10.1063/1.3657135.
InAs nanowires are grown epitaxially by catalyst-free metal organic vapor phase epitaxy and are subsequently positioned with a lateral accuracy of less than 1 μm using simple adhesion forces between the nanowires and an indium tip. The technique, requiring only an optical microscope, is used to place individual nanowires onto the corner of a cleaved-edge wafer as well as across predefined holes in Si(3)N(4) membranes. The precision of the method is limited by the stability of the micromanipulators and the precision of the optical microscope.
砷化铟纳米线通过无催化剂金属有机气相外延法外延生长，随后利用纳米线与铟尖端之间的简单粘附力，以小于1μm的横向精度进行定位。该技术仅需一台光学显微镜，用于将单个纳米线放置在劈开边缘晶圆的角落以及硅氮化物（Si(3)N(4)）膜上的预定义孔上。该方法的精度受微操纵器稳定性和光学显微镜精度的限制。
