Institute of Applied Mechanics, Zhejiang University, Hangzhou 310027, China.
Nano Lett. 2012 Jan 11;12(1):141-4. doi: 10.1021/nl2031629. Epub 2011 Dec 7.
Functionalized graphene has been extensively studied with the aim of tailoring properties for gas sensors, superconductors, supercapacitors, nanoelectronics, and spintronics. A bottleneck is the capability to control the carrier type and density by doping. We demonstrate that a two-step process is an efficient way to dope graphene: create vacancies by high-energy atom/ion bombardment and fill these vacancies with desired dopants. Different elements (Pt, Co, and In) have been successfully doped in the single-atom form. The high binding energy of the metal-vacancy complex ensures its stability and is consistent with in situ observation by an aberration-corrected and monochromated transmission electron microscope.
功能化石墨烯已被广泛研究，旨在通过掺杂来调整气体传感器、超导体、超级电容器、纳米电子学和自旋电子学的性能。一个瓶颈是通过掺杂来控制载流子类型和密度的能力。我们证明了两步工艺是掺杂石墨烯的有效方法：通过高能原子/离子轰击产生空位，并将所需的掺杂剂填入这些空位。不同的元素（Pt、Co 和 In）已成功以单原子形式掺杂。金属-空位复合物的高结合能确保了其稳定性，这与使用校正像差和单色透射电子显微镜的原位观察一致。
