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石墨烯器件中的化学掺杂与电子-空穴传导不对称性

Chemical doping and electron-hole conduction asymmetry in graphene devices.

作者信息

Farmer Damon B, Golizadeh-Mojarad Roksana, Perebeinos Vasili, Lin Yu-Ming, Tulevski George S, Tsang James C, Avouris Phaedon

机构信息

IBM T.J. Watson Research Center, Yorktown Heights, New York 10598, USA.

出版信息

Nano Lett. 2009 Jan;9(1):388-92. doi: 10.1021/nl803214a.

Abstract

We investigate poly(ethylene imine) and diazonium salts as stable, complementary dopants on graphene. Transport in graphene devices doped with these molecules exhibits asymmetry in electron and hole conductance. The conductance of one carrier is preserved, while the conductance of the other carrier decreases. Simulations based on nonequilibrium Green's function formalism suggest that the origin of this asymmetry is imbalanced carrier injection from the graphene electrodes caused by misalignment of the electrode and channel neutrality points.

摘要

我们研究了聚乙烯亚胺和重氮盐作为石墨烯上稳定的互补掺杂剂。用这些分子掺杂的石墨烯器件中的输运表现出电子和空穴电导的不对称性。一种载流子的电导得以保留,而另一种载流子的电导则降低。基于非平衡格林函数形式的模拟表明,这种不对称性的根源是由于电极和沟道中性点的不对准导致从石墨烯电极注入的载流子不平衡。

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