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用于挠性透明导体和电子场发射器的碳纳米管-石墨烯杂化材料的可控生长。

Controlled growth of carbon nanotube-graphene hybrid materials for flexible and transparent conductors and electron field emitters.

机构信息

Department of Materials Science and Engineering, National Tsing-Hua University, Hsinchu, Taiwan 300, ROC.

出版信息

Nanoscale. 2012 Jan 21;4(2):632-8. doi: 10.1039/c1nr11328c. Epub 2011 Dec 7.

DOI:10.1039/c1nr11328c
PMID:22147118
Abstract

We report a versatile synthetic process based on rapid heating and cooling chemical vapor deposition for the growth of carbon nanotube (CNT)-graphene hybrid materials where the thickness of graphene and density of CNTs are properly controlled. Graphene films are demonstrated as an efficient barrier layer for preventing poisoning of iron nanoparticles, which catalyze the growth of CNTs on copper substrates. Based on this method, the opto-electronic and field emission properties of graphene integrated with CNTs can be remarkably tailored. A graphene film exhibits a sheet resistance of 2.15 kΩ sq(-1) with a transmittance of 85.6% (at 550 nm), while a CNT-graphene hybrid film shows an improved sheet resistance of 420 Ω sq(-1) with an optical transmittance of 72.9%. Moreover, CNT-graphene films are demonstrated as effective electron field emitters with low turn-on and threshold electric fields of 2.9 and 3.3 V μm(-1), respectively. The development of CNT-graphene films with a wide range of tunable properties presented in this study shows promising applications in flexible opto-electronic, energy, and sensor devices.

摘要

我们报告了一种基于快速加热和冷却化学气相沉积的多功能合成工艺,用于生长碳纳米管(CNT)-石墨烯杂化材料,可适当控制石墨烯的厚度和 CNT 的密度。石墨烯薄膜可用作防止铁纳米粒子中毒的有效阻挡层,铁纳米粒子可催化 CNT 在铜衬底上的生长。基于这种方法,可以显著调整与 CNT 集成的石墨烯的光电和场发射性能。石墨烯薄膜的方阻为 2.15 kΩ sq(-1),透光率为 85.6%(在 550nm 处),而 CNT-石墨烯杂化薄膜的方阻为 420 Ω sq(-1),透光率为 72.9%。此外,CNT-石墨烯薄膜可用作有效的电子场发射器,开启和阈值电场分别为 2.9 和 3.3 V μm(-1)。本研究中展示的具有广泛可调性能的 CNT-石墨烯薄膜的开发显示出在柔性光电、能源和传感器设备中的应用前景。

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