Abdul Rahman A T, Hugtenburg R P, Abdul Sani Siti Fairus, Alalawi A I M, Issa Fatma, Thomas R, Barry M A, Nisbet A, Bradley D A
Centre for Nuclear and Radiation Physics, Department of Physics, University of Surrey, and Department of Medical Physics, The Royal Surrey County Hospital, NHS Trust, GU2 7XH Guildford, UK.
Appl Radiat Isot. 2012 Jul;70(7):1436-41. doi: 10.1016/j.apradiso.2011.11.030. Epub 2011 Nov 25.
We investigate the ability of high spatial resolution (∼120 μm) Ge-doped SiO2 TL dosimeters to measure photoelectron dose enhancement resulting from the use of a moderate to high-Z target (an iodinated contrast media) irradiated by 90 kVp X-rays. We imagine its application in a novel radiation synovectomy technique, modelled by a phantom containing a reservoir of I2 molecules at the interface of which the doped silica dosimeters are located. Measurements outside of the iodine photoelectron range are provided for using a stepped-design that allows insertion of the fibres within the phantom. Monte Carlo simulation (MCNPX) is used for verification. At the phantom medium I2-interface additional photoelectron generation is observed, ∼60% above that in the absence of the I2, simulations providing agreement to within 3%. Percentage depth doses measured away from the iodine contrast medium reservoir are bounded by published PDDs at 80 kVp and 100 kVp.
我们研究了高空间分辨率（约120μm）的掺锗SiO₂热释光剂量计测量由90 kVp X射线照射中等至高Z靶（碘化造影剂）所导致的光电子剂量增强的能力。我们设想其在一种新型放射性滑膜切除术技术中的应用，该技术由一个包含I₂分子储库的体模模拟，掺杂二氧化硅剂量计位于该储库的界面处。通过采用阶梯式设计，将光纤插入体模内，从而提供了碘光电子范围之外的测量结果。蒙特卡罗模拟（MCNPX）用于验证。在体模介质的I₂界面处观察到额外的光电子产生，比不存在I₂时高出约60%，模拟结果与之相符，误差在3%以内。远离碘造影剂储库测量的百分深度剂量受80 kVp和100 kVp下已发表的百分深度剂量数据限制。
