Nano-organic Photoelectronic Laboratory, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing 100190, PR China.
Chemistry. 2012 Jan 16;18(3):975-80. doi: 10.1002/chem.201102395. Epub 2011 Dec 13.
Organic one-dimensional nanostructures are attractive building blocks for electronic, optoelectronic, and photonic applications. Achieving aligned organic nanowire arrays that can be patterned on a surface with well-controlled spatial arrangement is highly desirable in the fabrication of high-performance organic devices. We demonstrate a facile one-step method for large-scale controllable patterning growth of ordered single-crystal C(60) nanowires through evaporation-induced self-assembly. The patterning geometry of the nanowire arrays can be tuned by the shape of the covering hats of the confined curve-on-flat geometry. The formation of the pattern arrays is driven by a simple solvent evaporation process, which is controlled by the surface tension of the substrate (glass or Si) and geometry of the evaporation surface. By sandwiching a solvent pool between the substrate and a covering hat, the evaporation surface is confined to along the edge of the solvent pool. The geometry of the formed nanowire pattern is well defined by a surface-tension model of the evaporation channel. This simple method is further established as a general approach that is applicable to two other organic nanostructure systems. The I-V characteristics of such a parallel, organic, nanowire-array device was measured. The results demonstrate that the proposed method for direct growth of nanomaterials on a substrate is a feasible approach to device fabrication, especially to the fabrication of the parallel arrays of devices.
有机一维纳米结构是电子、光电和光子应用的理想构建模块。在制造高性能有机器件时，非常需要在表面上实现具有良好控制的空间排列的对齐的有机纳米线阵列。我们通过蒸发诱导自组装展示了一种用于大规模可控图案化生长有序单晶 C(60)纳米线的简单一步法。纳米线阵列的图案化几何形状可以通过受限曲线在平面上的覆盖帽的形状来调节。图案阵列的形成是由简单的溶剂蒸发过程驱动的，该过程由基底（玻璃或 Si）的表面张力和蒸发表面的几何形状控制。通过在基底和覆盖帽之间夹一个溶剂池，蒸发表面被限制在溶剂池的边缘。形成的纳米线图案的几何形状由蒸发通道的表面张力模型很好地定义。这种简单的方法进一步被确立为一种通用方法，适用于另外两种有机纳米结构系统。这种平行的有机纳米线阵列器件的 I-V 特性也进行了测量。结果表明，在基底上直接生长纳米材料的这种方法是一种可行的器件制造方法，特别是对于平行器件阵列的制造。
